Magnetic susceptibilities of diluted magnetic semiconductors and anomalous Hall-voltage noise
نویسندگان
چکیده
The carrier-spin and impurity-spin densities in diluted magnetic semiconductors are considered using a semiclassical approach. Equations of motions for the spin densities and the carrier-spin current density in the paramagnetic phase are derived, exhibiting their coupled diffusive dynamics. The dynamical spin susceptibilities are obtained from these equations. The theory holds for p-type and n-type semiconductors doped with magnetic ions of arbitrary spin quantum number. Spin-orbit coupling in the valence band is shown to lead to anisotropic spin diffusion and to a suppression of the Curie temperature in p-type materials. As an application we derive the Hall-voltage noise in the paramagnetic phase. This quantity is critically enhanced close to the Curie temperature due to the contribution from the anomalous Hall effect.
منابع مشابه
Scattering mechanism of nonmagnetic phase on nano diluted magnetic semiconductors (DMS)
This paper shows the scattering mechanism at diluted magneticsemiconductors. The doped magnetic atom produces a scattering potential due to becoupled of itinerant carrier spin of host material with magnetic momentum of the dopedmagnetic atom. Formulas of scattering event were rewritten by the plane waveexpansion and then the electron mobility of DMS was calculated. Calculations showKondo effect...
متن کاملANALYSIS OF SOME MAGNETIC PROPERTIES OF DILUTED MAGNETIC SEMICONDUCTORS
The susceptibility and specific heat experimental results of the diluted magnetic semiconductors (DMS) are incorporated in a model based on short-range as well as long-range interaction in a random may of magnetic ions. The so-called nearestneighbor pair approximation (NNPA) is applied. It appears that the calculated values of zero field specific heat and Curie-Weiss temperature based on th...
متن کاملAnomalous Hall effect in ferromagnetic semiconductors.
We present a theory of the anomalous Hall effect in ferromagnetic (III, Mn)V semiconductors. Our theory relates the anomalous Hall conductance of a homogeneous ferromagnet to the Berry phase acquired by a quasiparticle wave function upon traversing closed paths on the spin-split Fermi surface. The quantitative agreement between our theory and experimental data in both (In, Mn)As and (Ga, Mn)As ...
متن کاملخواص ترابردی مغناطیسی واثر هال در نمونه هایGdpr-123
Single phase polycrystalline Gd1-xPrxBa2Cu3O7-δ samples with x=0.05 , 0.10, and 0.15 have been prepared by standard solid state reaction technique and characterized by XRD and SEM analysis. The electrical resistivity, Hall effect and magnetoresistance measurements have been on the samples. The electrical resistivity measurements indicate a reduction of transition temperature (Tc) and an incre...
متن کاملCo-occurrence of Superparamagnetism and Anomalous Hall Effect in Doped Rutile TiO2-δ Films
We report a detailed magnetic and structural analysis of highly reduced Co d displaying an anomalous Hall effect (AHE). The temperature and field dependen transmission electron microscopy clearly establish the presence of nano-sized s clusters of ~8–10 nm size in the films at the interface. The co-occurrence of s AHE raises questions regarding the use of the AHE as a test of the intrinsic natu ...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره شماره
صفحات -
تاریخ انتشار 2004